Панчук Олег Ельпідефорович

Наукові публікації

 P.Fochuk, O.Panchuk, Shcherbak L. Specification of dominant point defect nature in CdTe”. Physics and Chemistry of Solids State. 2004, v.5, №1, p.136-141.

  1. Fochuk P., Panchuk O. Shcherbak L., Siffert P.  High temperature behavior of CdTe crystals, Phys. Stat.  Sol.(c). 2005, v.2. №3. p.1178-1183.
  2. H.-E. Mahnke, H. Haas, E. Holub-Krappe, V. Koteski, N. Novakovic, P. Fochuk and O. Panchuk. Lattice distortion around impurity atoms as dopants in CdTe. Thin Solid Films, 2005, v. 480-481,  p.279-282.
  3. Fochuk P., Panchuk O., Shcherbak L., Siffert P. Point defect structure of CdTe crystals at high temperatures. – Phys. Stat. Solidi (c), 2005, v.2, p.1178-1183.
  4. P.Fochuk, O.Panchuk. Si as dopant impurity in CdTe – Functional materials, 2005, v.12, N 4, p.771-774.
  5. P.Fochuk, O. Panchuk, O. Korovyanko, Ye. Verzhak, I. Yuriychuk, A. Fatuyev. Predominant point defects in Te saturated CdTe. – Phys.stat.solidi (c), 2006, v.3, N4, p. 821-4.
  6. P.Fochuk, O.Panchuk. CdTe native point defects under Cd saturation. – Phys.stat.solidi (c), 2006, v.3. N4, p.825-8.
  7.  Fochuk P., Parfenyuk O., Panchuk O. Electrical charaсteristics of CdTe:Pb single crystals at High temperatures. FTP (Semiconductors), 2006, v.40, N6, p.646-650.
  8. H.-E.Mahnke, H.Haas, V.Koteski, N.Novakovic, P.Fochuk, O.Panchuk. Experimental verification of calculated Lattice Relaxations Around Impurities. – Hyperfine Interactions, 2005, v.158 N1-4, p. 353-359.
  9. J.Roither, S.Pichler, M.Kovalenko, W.Heiss, P.Feychuk, O.Panchuk, J.Allam, B.Murdin. Two- and one-dimensional propagations and gain in layer-by-layer deposited colloidal nanocrystal waveguides. – Applied Physics Letters, 2002, v.89, p.1111201-3
  10. Grill R., Fochuk P., Franc J., Nahlovsky B., Hoeschl P., Moravec P., Zakharuk Z., Nykonyuk Ye., Panchuk O. High-temperature defect study of Te-enriched CdTe:In. – Phys. Stat.Solidi (b), 2006, v.243, p.787-793.
  11. Fochuk P., Grill R., Panchuk O., The nature of Point Defects in CdTe. – J.Electronic Materials, 2006, v. 35, N6, p.1354-1359.
  12. P. Fochuk, Yu. Obedzynska, N. Armani, Z. Zakharuk,  I. Yuriychuk, O. Kopach and O. Panchuk. High-temperature electrical properties of CdTe:Bi single crystals, Phys. Stat. Sol.(c), 2009, v.6, № 5, p.1217-1220.
  13. Ye.Verzhak, O. Kopach, O. Panchuk, A. Bolotnikov, R. B. James. Dopant Content and Thermal Treatment of Cd1-xZnxTe: Effects on Point-Defect Structures // IEEE Trans. Nucl. Sci , 2009, v.56,
  14. R. Grill, E. Belas, M. Bugár, P. Höschl, B. Nahlovskyy, P. Fochuk, O. Panchuk, A. E., Bolotnikov, R. B. James. Multi-Species Diffusion in CdTe, IEEE Trans. Nucl. Sci, 2009. v. 56, № 4, p.1763-1767
  15. P. Fochuk, Ye. Nykonyuk, Ye.Verzhak, O. Kopach, O. Panchuk, A. Bolotnikov, R. B. James. Dopant Content and Thermal Treatment of Cd1-xZnxTe: Effects on Point-defect Structures IEEE Trans. Nucl. Sci., 2009, № 4, p.1784-1790.
  16. R. Grill, E. Belas, M. Bugár, P. Höschl, B. Nahlovskyi, P. Fochuk, O. Panchuk, A. E., Bolotnikov, R. B. James. Multi-Species Diffusion in CdTe, IEEE Trans. Nucl. Sci., 2009. № 4, p.1763-1767.
  17. O. Panchuk and P. Fochuk. “Doping” in: CdTe and Related Compounds: Physics, Defects, Hetero- and Nano-structure, Crystal Growth, Surfaces and Applications (editors – R. Triboulet, P. Siffert), 2010, p.309-362.
  18. P. Fochuk and O. Panchuk. “Experimental identification of the point defects” in: CdTe and Related Compounds: Physics, Defects, Hetero- and Nano-structure, Crystal Growth, Surfaces and Applications. Book. (editors – R. Triboulet, P. Siffert), 2010, p.292-307.
  19. Fochuk P., Grill R.Kopach O.Bolotnikov A. E.,  Belas E.Bugar M.Camarda G.Chan W.Cui Y., Hossain A.Kim K. H.,  Nakonechnyi I.Panchuk O.Yang G.James R. B. «Elimination of Te Inclusions in Cd1-xZnxTe Crystals by Short-term Thermal Annealing», IEEE. Trans. Nucl. Sci., 2012, v. 59, № 2, p. 256 – 263.
  20. P. Fochuk, I. Nakonechnyi, O. Panchuk, O. Kopach, Ye. Nykonyuk, R. Grill, E. Belas, K. H. Kim, A. E. Bolotnikov, Ge Yang and R. B. James. Changes in the electrical parameters of CdTe-based crystals during isothermal annealing, IEEE Trans. Nucl. Sci., 2015, v.62, № 3, p.  
  21. P. Fochuk, O. Panchuk, Ye. Nykonyuk, S Solodin, L. Diachenko, R. Grill, D.Shaw. “Electrical properties of In or Ga-saturated CdTe crystals at high-temperature point defect equilibrium”, 2016, v.664, p. 499-502.

Навчальні матеріали

1.Неорганічна хімія, конспект лекцій для студентів  хімічного факультету (теоретичні основи), Чернівці: Рута, 2006 (2006, 2009), 138 с.

2. Історія хімії, конспект лекцій для студентів хімічного факультету, Чернівці: Рута, 2010. 56 с.

3.Хімія напівпровідників, конспект лекцій для студентів хімічного факультету, Чернівці, Чернівецький національний університет, 2010. 88 с.